4 inch GaN-on-Si epi wafer manufacturer for Power HEMT

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Brand Name :HMT

Model Number :4 inch

Place of Origin :China

MOQ :10PCS

Payment Terms :T/T

Delivery Time :1 month

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4 inch GaN-on-Si epi wafer manufacturer Power HEMT

Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:

5G-related RF devices, such as power amplifier

High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.

Durable and reliable devices in harsh environments

High-end sensor devices

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