Homray Material Technology
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GaN-on-SiC epi wafer supplier for RF application customized
Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi-insulating SiC substrate. SiN passivation layer 0-30nm but 3nm preferred, AlGaN barrier 15-30nm but 21nm preferred. We supply the best price on the market, customers from all over the world have trusted HMT as their preferred manufacturer of GaN on SiC epi wafers.
Meanwhile, we also provide GaN on Si epi wafer and GaN on sapphire epi wafer, please contact us for more detailed technicals.